fqd5n60c / FQU5N60C n-channel mosfet absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics * when mounted on the minimum pad size recommended (pcb mount) symbol parameter fqd5n60c / FQU5N60C unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 2.8 a - continuous (t c = 100c) 1.8 a i dm drain current - pulsed (note 1) 11.2 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 210 mj i ar avalanche current (note 1) 2.8 a e ar repetitive avalanche energy (note 1) 4.9 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25c)* 2.5 w power dissipation (t c = 25c) 49 w - derate above 25c 0.39 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max unit r jc thermal resistance, junction-to-case - 2.56 c / w r ja thermal resistance, junction-to-ambient* - 50 c / w r ja thermal resistance, junction-to-ambient - 110 c / w ! !! ! ! !! ! ! !! ! ? ?? ? ! !! ! ! !! ! ! !! ! ? ?? ? s d g i-pak fqu series d-pak fqd series gs d gs d march 2013 fqd5n60c / FQU5N60C n-channel qfet mosfet 600 v, 2.8 a, 2.5 ? description this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. features ? 2 .8 a, 600 v, r ds(on) = 2.5 ? (max) @v gs = 10 v, i d = 1.4 a ? low gate charge (typ. 15 nc) ? low crss ( typ. 6.5 pf) ? 100% avalanche tested ? rohs compliant www. fairc h ildsemi.com ?20 03 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 18.9mh, i as = 4.5 a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 4.5a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.4 a -- 2.0 2.5 ? g fs forward transconductance v ds = 40 v, i d = 1.4 a (note 4) -- 4.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 515 670 pf c oss output capacitance -- 55 72 pf c rss reverse transfer capacitance -- 6.5 8.5 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 4.5a, r g = 25 ? (note 4, 5) -- 10 30 ns t r turn-on rise time -- 42 90 ns t d(off) turn-off delay time -- 38 85 ns t f turn-off fall time -- 46 100 ns q g total gate charge v ds = 480 v, i d = 4.5a, v gs = 10 v (note 4, 5) -- 15 19 nc q gs gate-source charge -- 2.5 -- nc q gd gate-drain charge -- 6.6 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2.8 a i sm maximum pulsed drain-source diode forward current -- -- 11.2 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.8 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 4.5 a, di f / dt = 100 a/ s (note 4) -- 300 -- ns q rr reverse recovery charge -- 2.2 -- c www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0481 21 6 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 4.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 024681 0 0 1 2 3 4 5 6 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 1.4 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 n otes : 1 . z jc (t) = 2.56 /w m a x. 2 . d u ty fa cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 7. breakdown voltage variation vs temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d , drain current [a] t c , case temperature [ ] figure 8. on-resistance variation vs temperature www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet dimensions in millimeters mechanical dimensions d - pak www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet mechanical dimensions dimensions in millimeters i - pak www. fairchildsemi.com ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
fqd5n60c / FQU5N60C n-channel mosfet www. fairchildsemi.com trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor re serves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 ? ?2003 fairchild semiconductor corporation fqd5n60c / FQU5N60C rev. c0
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